Gallium Nitride Substrates Market Size Worth $588.7 Million By 2030: IndustryARC

Gallium Nitride Substrates Market size is estimated to reach US$588.7 million by 2030, growing at a CAGR of 9.8% during the forecast period 2024-2030.The rising demand for GaN substrates from the automotive LED industry, rising demand for wide band gap substrates and the growing need forGaN-based power devices are driving the demand for Gallium Nitride Substrates from the end users, finds IndustryARC in its recent report, titled “Gallium Nitride Substrates Market Size, Share & Trends Analysis Report-By Type(GaN on Sapphire, GaN on Si, GaN on SiC, GaN on GaN), By Size (2 inch, 4 inch, 6 inch, 8 inch), By End Use Product (Laser, Light Emitting Diodes (LEDs), Power Electronics Devices, High Frequency Electronic Devices, Others), By Application(Servers and Data Centers, LiDAR, Wireless Charging Applications, Power Supply, Uninterruptable Power Supply (UPS), Others), By End Use Industry (Automotive, Healthcare, Consumer Electronics, Defense, Optical Storage, Telecommunication, Satellite Communication, Others),  By Geography - Global Opportunity Analysis & Industry Forecast, 2024-2030’’

Geographically, in the Gallium Nitride Substrates market share, Asia-Pacific is analyzed to grow with the highest CAGR of 10.6% during the forecast period 2024-2030. Japan, China, and Korea are the leading countries in APAC region contributing to over 80% of the production. Moreover, 90% of the bulk GaN substrate production is from players in the Asia-Pacific region, and Japan is the leading supplier. Additionally, the investment in 5G technology in the region also boost the Gallium Nitride Substrates Market. For instance, according to the Executive Yuan's Department of Information Services, from 2021 to 2025, the Taiwan government will invest an additional US$1.8 billion under the Forward-looking Infrastructure Development Program to assist the industry in accelerating and expanding efforts to promote the establishment of 5G infrastructure across the country.

GaN-based RF devices offer higher power density, wider bandwidth, and lower operating temperatures compared to conventional silicon-based RF devices, making them well-suited for 5G base stations, RF amplifiers, and phased array antennas. As the deployment of 5G networks accelerates worldwide, there is increasing demand for GaN substrates to support the expansion of high-speed, low-latency wireless communication networks and enable the development of advanced 5G-enabled devices and applications. 

GaN-on-silicon substrates combine the superior electrical properties of GaN with the cost-effectiveness and scalability of silicon wafer manufacturing processes, enabling the production of large-area GaN substrates at lower cost. This trend is fueling the development of GaN-based power devices, RF components, and optoelectronic devices for various applications, including automotive, aerospace, industrial, and consumer electronics. Additionally, advancements in epitaxial growth techniques, substrate engineering, and wafer bonding technologies are further enhancing the performance and manufacturability of GaN-on-silicon substrates, expanding their potential applications and market opportunities.

The performance of GaN-based devices is highly sensitive to substrate quality, including crystallographic defects, impurities, and surface roughness. Therefore, there is increasing demand for high-quality GaN substrates with low dislocation densities, high crystalline perfection, and uniform surface morphology. Semiconductor manufacturers and substrate suppliers are investing in advanced crystal growth techniques, substrate polishing processes, and quality control measures to produce high-purity GaN substrates that meet stringent performance requirements for power electronics, RF applications, and optoelectronic device.

GaN substrates are typically grown on small-diameter wafers, such as 2-inch or 4-inch diameter substrates, which restricts the size and scalability of GaN-based device fabrication. Additionally, the crystal quality of GaN substrates, including defect densities, dislocations, and surface roughness, can impact the performance and reliability of GaN-based devices. Despite efforts to improve substrate quality through advanced growth techniques and substrate engineering, challenges remain in achieving large-area, high-quality GaN substrates that meet the stringent requirements of emerging applications such as automotive, telecommunications, and renewable energy.

GaN substrates offer superior electrical and thermal properties compared to traditional silicon substrates, making them ideal for high-frequency, high-power electronic devices such as power converters, RF amplifiers, and LED drivers. As the demand for more energy-efficient and compact electronic systems grows across various industries such as automotive, industrial, telecommunications, and renewable energy, there is increasing interest in GaN-based power devices for applications such as electric vehicles, solar inverters, wireless charging systems, and data centers. This trend presents opportunities for semiconductor manufacturers, substrate suppliers, and device integrators to capitalize on the growing demand for GaN substrates and develop innovative GaN-based solutions that address the evolving needs of the power electronics market.

With the increasing electrification and autonomy of vehicles, there is a growing demand for more efficient, reliable, and compact electronic systems in automotive platforms. GaN substrates offer advantages such as higher power density, faster switching speeds, and improved thermal performance, making them suitable for use in electric drivetrains, onboard chargers, power management systems, and advanced driver assistance systems (ADAS). As automotive manufacturers and suppliers seek to enhance vehicle performance, efficiency, and safety while reducing emissions and carbon footprint, there is increasing interest in GaN-based solutions for automotive electronics.

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● Gallium Nitride Substrates Market Size and Forecast 

● Gallium Nitride Substrates Market Trends

● Gallium Nitride Substrates Market Analysis by Type

● CAGR of the market during the forecast period 2024-2030

● Value Chain analysis of key stake holders

● Detailed analysis of market drivers and opportunities during the forecast period

● Gallium Nitride Substrates Market size estimation and forecast

● Analysis and predictions on end users’ behavior and upcoming trends 

● Competitive landscape and Vendor market analysis including offerings, developments, and financials

● Comprehensive analysis of challenges and constraints in the Gallium Nitride Substrates Market

The COVID-19 pandemic drove up the demand for Gallium Nitrate Substrates. Due to lockdowns and new waves of infection, there was a high demand for medical devices as well as consumer electronics. In 2020, the Government of India invested $33.87 million in Sultanpur Medical devices Park Project, Telangana for the development of medical devices, $27.09 million Palghar Medical Factory upgradation project, $68 million in medical devices cluster project and $136 million in medical equipment manufacturing.

Ukraine and Russia are among the largest producers of gallium, according to the U.S. Geological Survey. However, due to the Ukraine crisis, there will be a shortage in supply of these raw materials, which impact the production of GaN substrates. This uncertainty also contributed to fluctuations in prices, impacting Gallium Nitride Substrates manufacturers amid a complex geopolitical situation.

The key companies profiled in the Gallium Nitride Substrates Market Report are listed below:

Report Code: CMR 45993

Report Code: CMR 27449

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Mr. Venkat Reddy

IndustryARC

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